1/5 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.06 - rev.a to-220fm 4.5 2.8 0.75 3.2 ( 2 )( 3 ) ( 1 ) 0.8 2.54 2.6 2.54 1.3 1.2 14.0 12.0 8.0 2.5 10.0 15.0 (1) gate (2) drain (3) source 10v drive nch mosfet R6018ANX ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) fast switching speed. 3) gate-source voltage (v gss ) guaranteed to be ? 30v. 4) drive circuits can be simple. 5) parallel use is easy. ? applications switching ? packaging specifications ? inner circuit package bulk basic ordering unit (pieces) 500 R6018ANX type ? absolute maximum ratings (ta=25 ? c) parameter range of storage temperature channel temperature power dissipation (tc=25 c) drain current gate-source voltage drain-source voltage v dss v gss p d tch 600 v v a w c 30 18 i d i dp continuous pulsed a 72 50 150 tstg c ? 55 to + 150 avalanche energy avalanche current i as 9 e as 21.6 symbol limits unit ? 1 pw 10 s, duty cycle 1% ? 1 ? 3 ? 3 i s a i sp a a mj continuous pulsed 18 72 source current (body diode) ? 1 ? 2 ? 2 ? 2 l 500 h, v dd = 50v, r g = 25 , starting, tch = 25 c ? 3 limited only by maximum temperature allowed. ? thermal resistance parameter c/w rth(ch-c) symbol limits unit c hannel to case 2.5 ? 1 body diode (1) gate (2) drain (3) source ? 1 (1) (2) (3)
2/5 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.06 - rev.a data sheet R6018ANX ? electrical characteristics (ta=25 ? c) parameter gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed symbol i gss v (br)dss i dss v gs(th) r ds(on) c iss | y fs | c oss c rss min. ? 600 ? 2.5 ? ? 6.5 ? ? ? ? ? ? 0.21 2050 ? 1400 60 100 ? 100 4.5 0.27 ? ? ? ? na v gs = 30v, v ds = 0v i d = 1ma, v gs = 0v v ds = 600v, v gs = 0v v ds = 10v, i d = 1ma i d = 9a, v gs = 10v v ds = 25v v ds = 10v, i d = 9a v gs = 0v f = 1mhz v a v pf s pf pf t d(on) ? 37 ? v dd 300v, i d = 9a ns t r ? 85 ? v gs = 10v ns t d(off) ? 155 ? r l = 33.3 ns t f ? 65 ? r g = 10 ns q g ? 55 ? v dd 300v i d = 18a v gs = 10v nc q gd ? 22 ? nc typ. max. unit conditions ? ? ? ? ? ? ? ? q gs ? 10 ? nc ? ? body diode characteristics (source-drain) (ta=25 ? c) v sd ?? 1.5 v i s = 18a, v gs =0v forward voltage ? pulsed parameter symbol min. typ. max. unit conditions ?
3/5 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.06 - rev.a data sheet R6018ANX ? electrical characteristic curves 0 5 10 15 20 012345 drain-source voltage: v ds (v) drain current: i d (a) ta= 25c pulsed v gs = 4.5v 5.0v 6.0v 5.5v 6.5v 7.0v 8.0v 10v 0 10 20 30 40 0 1020304050 drain-source voltage: v ds (v) drain current: i d (a) ta= 25c pulsed 5.0v v gs = 4.5v 6.0v 7.0v 8.0v 6.5v 10v fig .2: typical output char acter istics( ? ) 0.001 0.01 0.1 1 10 100 01 2345 67 gate-source voltage : v gs (v) drain current : i d (a) v ds = 10v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.4 typical transfer characteristics 0.01 0.1 1 10 0.1 1 10 100 drain current : i d (a) static drain-source on-state resistance: r ds(on) ( ? ) v gs = 10v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig .6 static drain-source on-state resistance vs. drain cur rent 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 gate-source voltage : v gs (v) static drain-source on-state resistance r ds(on) ( ? ) ta=25c pulsed i d = 9a i d = 18a fig .7 static drain-source on- state resistance vs. gate source voltage 0.01 0.1 1 10 100 0.01 0.1 1 10 100 drain current : i d (a) forward transfer admittance : |yfs| (s) v ds = 10v pulsed ta= -25c ta= 25c ta= 75c ta= 125c fig .9 forward transfer admittance vs. drain current 0.01 0.1 1 10 100 0.1 1 10 100 1000 drain-source voltage : v ds ( v ) drain current : i d (a) p w = 10ms tc = 25c sing le pulse dc oper ation p w =100us p w =1ms oper ation in this area is limited by r ds(on) fig .1 maximum safe operating aera fig .3: typical output characteristics( ?? ) fig.8 static drain-source on-state resistance vs. channel temperature 0 0.1 0.2 0.3 0.4 0.5 0.6 - 50 0 50 100 150 channel temperature: t ch ( ? c) static drain-source on-state resistance: r ds(on) ( ? ) v gs = 10v pulsed i d = 9a i d = 18a fig .5 gate threshold voltag e vs. channel temperature 0 1 2 3 4 5 6 -50 0 50 100 150 channel temperature: t ch ( ? c) gate threshold voltage: v gs(th) (v) v ds = 10v i d = 1ma
4/5 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.06 - rev.a data sheet R6018ANX 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width : pw(s) normarized transient thermal resistance : r (t) ta = 25c sing le pulse rth ch-a t = t rth ch-a rth ch-a = 53.8 c/w 10 100 1000 0.1 1 10 100 reverse drain current : i dr (a) reverse recovery time: trr (ns) ta= 25c di / dt= 100a / ? s v gs = 0v pulsed fig .13 rever se recover y time vs.reverse drain current 0.01 0.1 1 10 100 00.511.5 source-drain voltage : v sd (v) reverse drain current : i dr (a) v gs = 0v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig .10 reverse drain current vs. sourse-drain voltage 0 5 10 15 0 10203040506070 total gate charge : qg (nc) gate-source voltage : v gs (v) ta= 25c v dd = 300v i d = 18a r g = 10 ? pulsed fig .12 dynamic input characteristics 1 10 100 1000 10000 0.1 1 10 100 1000 drain-source voltage : v ds (v) capacitance : c (pf) c is s c oss c rss ta= 25c f= 1mhz v gs = 0v fig .11 typical capacitance vs. drain-source voltage 1 10 100 1000 10000 0.01 0.1 1 10 100 drain current : i d (a) switching time : t (ns) t r t f t d(on) t d(off) ta= 25c v dd = 300v v gs = 10v r g = 10 ? pulsed fig.14 switching characteristics fig .15 normalized transient thermal resistance vs. pulse width
5/5 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.06 - rev.a data sheet R6018ANX ? measurement circuit f ig.1-1 switching time measurement circu it v gs r g v d s d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) r g v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v d s d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)ds s i as 2 l e as = v (br)dss - v dd v (br)dss 1 2
r1120 a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without notice. the content specied herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical functions of and examples of application circuits for the produc ts. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any product, such as derating, redundancy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.
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